|
 Dr.
Faur has a Ph.D. in Solid State Chemistry, a Masters Degree in Physical
Chemistry and a BS in Electrochemistry, all from Cluj University, Romania. She has published 112 papers, and holds 16 patents. From 1972 to 1977 she was a research scientist at the
Research Institute of Physics and Nuclear Engineering (IFA), Energy
Conversion Laboratory, Bucharest, Romania. From 1977 to 1979 Dr Faur was
a research scientist at the
Central Research Institute for Chemistry (ICECHIM), Radiochemical
Laboratory, Bucharest, Romania. From 1980 to 1985 Dr. Faur was a senior research scientist at the
Electrical Engineering
Research Institute (ICPE), Solar and Wind Electric Energy Conversion
Laboratory, Bucharest, Romania. From 1986 through 1992, she was a senior
research associate at Cleveland State University (CSU) working
under a NASA grant. Under
an exclusive NASA GRC funding of the Space Photovoltaic Research Center
(SPRC) at CSU, she developed new or improved electrochemical techniques
with applications to InP solar cell fabrication, and for
characterization of InP and related III-V materials and structures such
as:
-
various surface preparation techniques,
-
thinning the front damaged emitter layer to obtain smooth, low defect
density surfaces with good electrical characteristics,
-
surface passivation,
-
determination of density of surface and deep dislocations
and precipitates,
-
and high accuracy EC-V
majority carrier concentration depth profiling.
From
1992 through 1995 she was awarded a National Research Council (NRC)/NASA
senior research associateship in the Photovoltaic and Space Environment
Branch at NASA GRC. During this program, she has developed new
electrochemical characterization and processing techniques for Si, Ge
and InP and GaAs based binary, ternary and quaternary III-V compound
semiconductor structures.
In 1996-1998, for 6 months each year, she was a senior research
associate at CSU as a subcontractor to the NASA LeRC Director's
Discretionary Fund (DDF) proposal entitled, "Ultra-Low-Cost Room
Temperature Wet Chemical Growth of SiC Thin Films." Dr. Faur investigated
the effectiveness of a new room temperature thin film SiC growth
technique on Silicon and Germanium substrates, to be used as a protective
and antireflective coating. In November 1996 she formed SPECMAT, Inc.
where she currently serves as president and CEO.
Press Here To Contact Maria Faur
|
